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150 Gbaud high-efficiency O-band silicon microring modulator
Optics Express
|May 4, 2026
Summary
Researchers developed a novel silicon microring modulator using an L-shaped PN junction. This design significantly boosts modulation efficiency for optical communications, achieving high-speed data transmission.
Area of Science:
- Photonics and Optoelectronics
- Materials Science
- Electrical Engineering
Background:
- Silicon microring modulators are crucial for high-speed optical communication systems.
- Existing designs face limitations in modulation efficiency and operational bandwidth.
- Optimizing electro-optic overlap is key to enhancing modulator performance.
Purpose of the Study:
- To demonstrate a high-efficiency O-band silicon microring modulator.
- To investigate the performance benefits of an L-shaped PN junction design.
- To achieve enhanced modulation efficiency and high-speed data transmission capabilities.
Main Methods:
- Fabrication of an O-band silicon microring modulator featuring an L-shaped PN junction.
- Optimization of the PN junction geometry for improved electro-optic overlap.
- Characterization using static measurements (extinction ratio, Q-factor) and high-speed transmission experiments.
Main Results:
- Achieved a modulation efficiency of 51 pm/V, a twofold enhancement over conventional designs.
- Obtained a low Vπ·L of 0.42 V·cm, an extinction ratio of 18 dB, and a Q-factor of 2500.
- Demonstrated 150 Gbaud NRZ signal operation with a bit error rate below the FEC threshold, leveraging optical peaking for >102 GHz bandwidth.
Conclusions:
- The L-shaped PN junction design offers superior modulation efficiency for silicon microring modulators.
- This advancement enables high-speed optical data transmission at 150 Gbaud.
- The developed modulator is a promising component for next-generation optical communication networks.
