Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Unraveling the Distinct Roles of Al and Ca in Microstructure Evolution and Tensile Response of Extruded Mg-Al-Ca Alloys.

Materials (Basel, Switzerland)·2026
Same author

Harnessing a Functional Rhizobial Partnership with <i>Astragalus sinicus</i> L. to Unlock Phytoremediation Potential for Soil Heavy Metals.

Journal of agricultural and food chemistry·2026
Same author

A social network analysis of fraud prediction on crowdsourcing platforms.

PloS one·2026
Same author

Nonvolatile PCM-driven photonic computing using programmable sub-wavelength digital metasurfaces.

Optics letters·2025
Same author

MOF-derived NiAl<sub>2</sub>O<sub>4</sub>/NiCo<sub>2</sub>O<sub>4</sub> porous materials as supercapacitors with high electrochemical performance.

Physical chemistry chemical physics : PCCP·2024
Same author

Effect of Sintering Temperature on Properties of Carbon Fiber-Reinforced Titanium Matrix Composites.

ACS omega·2022

Related Experiment Video

Updated: May 5, 2026

Fabrication of Silica Ultra High Quality Factor Microresonators
07:51

Fabrication of Silica Ultra High Quality Factor Microresonators

Published on: July 2, 2012

16.0K

150 Gbaud high-efficiency O-band silicon microring modulator.

Zhiyuan Zhou, Zhihan Sun, Huajie Wan

    Optics Express
    |May 4, 2026
    PubMed
    Summary

    Researchers developed a novel silicon microring modulator using an L-shaped PN junction. This design significantly boosts modulation efficiency for optical communications, achieving high-speed data transmission.

    More Related Videos

    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
    09:46

    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

    Published on: August 8, 2025

    1.3K
    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    7.9K

    Related Experiment Videos

    Last Updated: May 5, 2026

    Fabrication of Silica Ultra High Quality Factor Microresonators
    07:51

    Fabrication of Silica Ultra High Quality Factor Microresonators

    Published on: July 2, 2012

    16.0K
    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
    09:46

    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

    Published on: August 8, 2025

    1.3K
    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    7.9K

    Area of Science:

    • Photonics and Optoelectronics
    • Materials Science
    • Electrical Engineering

    Background:

    • Silicon microring modulators are crucial for high-speed optical communication systems.
    • Existing designs face limitations in modulation efficiency and operational bandwidth.
    • Optimizing electro-optic overlap is key to enhancing modulator performance.

    Purpose of the Study:

    • To demonstrate a high-efficiency O-band silicon microring modulator.
    • To investigate the performance benefits of an L-shaped PN junction design.
    • To achieve enhanced modulation efficiency and high-speed data transmission capabilities.

    Main Methods:

    • Fabrication of an O-band silicon microring modulator featuring an L-shaped PN junction.
    • Optimization of the PN junction geometry for improved electro-optic overlap.
    • Characterization using static measurements (extinction ratio, Q-factor) and high-speed transmission experiments.

    Main Results:

    • Achieved a modulation efficiency of 51 pm/V, a twofold enhancement over conventional designs.
    • Obtained a low Vπ·L of 0.42 V·cm, an extinction ratio of 18 dB, and a Q-factor of 2500.
    • Demonstrated 150 Gbaud NRZ signal operation with a bit error rate below the FEC threshold, leveraging optical peaking for >102 GHz bandwidth.

    Conclusions:

    • The L-shaped PN junction design offers superior modulation efficiency for silicon microring modulators.
    • This advancement enables high-speed optical data transmission at 150 Gbaud.
    • The developed modulator is a promising component for next-generation optical communication networks.