150 Gbaud high-efficiency O-band silicon microring modulator

We demonstrate a high-efficiency O-band carrier-depletion silicon microring modulator enabled by an L-shaped PN junction with optimized electro-optic overlap. This design yields a modulation efficiency of 51 pm/V, representing a twofold enhancement over conventional lateral PN junctions, and a corresponding low Vπ·L of 0.42 V·cm. Static measurements show an extinction ratio of 18 dB and a Q-factor of 2500. The 3-dB electro-optic bandwidth measures 75 GHz at a 3-dB insertion loss detuning point, and extends beyond 102 GHz by leveraging the optical peaking effect. High-speed transmission experiments demonstrate 150 Gbaud NRZ signal operation with a 2 Vpp swing. A bit error rate of 1.93 × 10^-2 is achieved using receiver-side offline digital signal processing, below the soft-decision forward error correction threshold.