Photo-thermal crosstalk in AlGaInP and InGaN LEDs under dual-wavelength excitation

Area of Science:

• Optoelectronics
• Solid State Physics
• Materials Science

Background:

• Opto-thermal crosstalk is a significant challenge in high-density LED arrays, impacting performance and reliability.
• Understanding the interplay between optical gain and thermal effects is crucial for advanced LED development.

Purpose of the Study:

• To develop a physics-informed photo-thermal scalar model to analyze opto-thermal crosstalk in LED arrays.
• To extract key opto-thermal parameters for AlGaInP and InGaN chips under specific excitation wavelengths.
• To differentiate between direct photoluminescence gain and indirect photo-thermal attenuation.

Main Methods:

• Utilized a physics-informed photo-thermal scalar model.
• Employed spatially resolved micro-photoluminescence mapping.
• Conducted calibrated DC electro-thermal characterization.

Main Results:

• Quantified material-specific opto-thermal responses for InGaN and AlGaInP.
• InGaN demonstrated radiative enhancement through quantum-confined Stark effect (QCSE) screening and band-filling mitigation.
• AlGaInP exhibited thermal quenching due to high temperature sensitivity.

Conclusions:

• The developed model effectively separates optical and thermal effects in LEDs.
• Findings provide material-level design and calibration guidance for integrated LED systems.
• Insights into InGaN and AlGaInP behavior facilitate optimization of LED performance and efficiency.