Photo-thermal crosstalk in AlGaInP and InGaN LEDs under dual-wavelength excitation

To address opto-thermal crosstalk in high-density LED arrays, this study develops a physics-informed photo-thermal scalar model. Combined with spatially resolved micro-photoluminescence mapping and calibrated DC electro-thermal characterization, the model extracts key opto-thermal parameters of AlGaInP and InGaN chips under 405/470 nm single/dual-wavelength excitation. It separates direct photoluminescence gain from indirect photo-thermal attenuation, quantifying material-specific responses: InGaN achieves radiative enhancement via quantum-confined Stark effect (QCSE) screening and band-filling mitigation, while AlGaInP shows thermal quenching due to higher temperature sensitivity-providing material-level design and calibration guidance for integrated LED systems.