Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal

A comparative study was undertaken to examine the V_TH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and negative gate stress, involving in-depth analyses of the net negative charge accumulation processes in the gate region and buffer layer, thereby revealing the degradation mechanisms of the devices. The findings indicate that the p-NiO RESURF terminal effectively enhances the stability of V_TH under off-state drain voltage stress by injecting holes into the buffer layer and hence initiating a light-pumping effect, and simultaneously also by flattening the electric field peak on the drain side beneath the gate and thus significantly mitigating hole loss in the gate region and electron capture in the buffer layer. This study provides a theoretical basis for the application of the p-NiO RESURF terminal in p-GaN HEMTs.