Design and Simulation of Broadband SiN Waveguide-Integrated GeSn Single-Photon Avalanche Detectors at...

We investigate the potential to adopt waveguide-integrated GeSn single-photon avalanche detectors (SPADs) over a wideband wavelength range from very-near-infrared to telecommunication wavelengths based on an Si-rich SiN waveguide platform via an end-fire coupling approach. Electrical properties of GeSn SPAD heterodiodes are investigated, including their I-V characteristics, electric field distribution, charge sheet doping variation, avalanche triggering probabilities, dark count rate, and afterpulsing probability, to identify the appropriate critical parameters and to reliably benchmark against previous related simulation works. Notably, to enable a waveguide-integrated GeSn SPAD for the entire wavelength of interest, this paper finds that, among several potentially important parameters, the coupling efficiency between the input waveguide and the GeSn SPAD plays a very critical role in determining the single-photon detection efficiency (SPDE) performance, and a suitable GeSn absorber thickness should be carefully considered according to the chosen Sn content. Interestingly, although the coupling efficiency and SPDE are significantly varied between the longer wavelengths of 1310 and 1550 nm and the shorter wavelengths of 700 and 900 nm, an acceptable SPDE performance can be maintained for all wavelengths of interest for both close end-fire coupling (no gap between the amorphous Si-rich SiN waveguide and the GeSn SPAD) and a 50 nm gap assumption for simpler fabrication.