Related Experiment Video
Updated: May 5, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Controlling neural activity by shunting channel current in a memristive FitzHugh-Nagumo circuit
Binchi Wang1, Jiarong Zhao2, Zhao Lei3
1School of Microelectronics Industry-Education Integration, Lanzhou University of Technology, Lanzhou 730050, China.
Abstract:
Membrane potential is an observable output, whereas the ion channel pathway governs the internal current partitioning that shapes neural firing modes. Here, we construct a memristive FitzHugh-Nagumo neural circuit in which a tunable diversion branch is connected to the canonical ion channel branch, enabling the regulation of neural firing through the controlled redistribution of channel current. Physical implementation of this strategy is verified by incorporating different electric elements in the sub-branch circuit: (i) a shunting capacitor for differential-type diversion and (ii) a shunting inductor in series with a protective resistor for integral-type diversion. For the two controlled circuits, physical equations and field energy functions are derived, and the corresponding theoretical models and corresponding energy functions are obtained and further checked by the Helmholtz theorem. Numerical analysis shows that capacitive shunting can trigger an abrupt collapse of the inductive energy level in L1 and thereby induce firing-mode transitions, whereas inductive shunting produces markedly weaker modulation over comparable parameter ranges. The model also exhibits noise-induced stochastic resonance, and an adaptive energy-guided regulation law controls the electrical activities effectively. The results suggest that control of firing patterns depends on the physical property of the shunting element and provide a physically interpretable strategy for ion-channel-level regulation in memristive neural circuits.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET Amplifiers
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

