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Updated: May 6, 2026

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Published on: March 6, 2017
Defect-Dependent Nonradiative Carrier Recombination in Cesium Lead Halide Perovskite Quantum Dots: A Time-Domain Ab
Zihang Liu1,2, Linyu Bai2, Qiquan Luo1
1Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China.
Abstract:
All-inorganic metal halide perovskite quantum dots (QDs), such as CsPbBr3, exhibit high structural stability and promising optoelectronic properties. However, their performance is often limited by defect-mediated nonradiative recombination. The microscopic mechanisms, however, remain poorly understood. Here, we employ nonadiabatic molecular dynamics to reveal defect-dependent nonradiative recombination mechanisms in CsPbBr3 QDs. By examining representative intrinsic defects, including Br vacancies (VBr), Cs interstitials (Csi), and PbBr antisites, we identify two distinct recombination regimes governed by coherence-dominated and lattice-coupled processes. Specifically, VBr causes only minor lattice distortion and weak electron-vibrational interactions, preserving electronic coherence and small nonadiabatic coupling, thus leading to moderately accelerated recombination. In contrast, Csi and PbBr induce pronounced lattice deformations that strongly couple with the defect state, enhancing nonadiabatic coupling and driving much faster carrier recombination. These results establish a mechanistic picture of defect-dependent carrier loss in CsPbBr3 QDs and offer guidance for defect engineering in perovskite nanomaterials.
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