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Related Concept Videos

MOSFET Amplifiers01:17

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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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Updated: May 7, 2026

Assembly and Characterization of an External Driver for the Generation of Sub-Kilohertz Oscillatory Flow in Microchannels
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Microwave-acoustic-based isolated gate driver for power electronics.

Liyang Jin1, Zichen Xi1, Joseph G Thomas1,2

  • 1Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA.

Communications Engineering
|May 5, 2026
PubMed
Summary
This summary is machine-generated.

This study introduces a novel gate driver using surface acoustic wave (SAW) devices for safe electrical isolation. It enables simultaneous power and signal transmission with high performance across extreme temperatures.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Physics

Background:

  • Electrical isolation is crucial for safety and minimizing electromagnetic interference (EMI).
  • Existing methods face challenges in simultaneously transmitting power and signals through a unified channel.
  • Advanced power electronics demand compact, high-performance solutions for isolated power and signal transmission.

Purpose of the Study:

  • To demonstrate a mechanically-isolated gate driver utilizing microwave-frequency surface acoustic wave (SAW) devices.
  • To achieve high galvanic isolation and ultralow isolation capacitance for power and signal transmission.
  • To validate the performance and operational range of the SAW-based gate driver in power electronic applications.

Main Methods:

  • Fabrication of a mechanically-isolated gate driver based on microwave-frequency SAW devices on lithium niobate.
  • Characterization of galvanic isolation (2.75 kV), isolation capacitance (0.032 pF), and output voltage/current.
  • Demonstration of isolated gate driving for gallium nitride (GaN) high-electron-mobility transistors and operation in a buck converter.
  • Testing the device's operational temperature range from 0.5 K to 544 K.

Main Results:

  • Achieved 2.75 kV galvanic isolation with 0.032 pF isolation capacitance.
  • Delivered 13.4 V open-circuit voltage and 44.4 mA short-circuit current.
  • Demonstrated isolated gate driving for GaN transistors with a 108.8 ns turn-on time and validated operation in a buck converter.
  • Confirmed functionality over an ultrawide temperature range (0.5 K to 544 K).

Conclusions:

  • The developed SAW-based gate driver offers a viable solution for high-performance isolated power and signal transmission.
  • The technology provides inherent EMI immunity and potential for heterogeneous integration.
  • This advancement enables compact and efficient isolated power solutions for next-generation power electronics.