Electrically Tunable Tunneling and Spectral Response in WSe₂/h-BN/CdSe/Graphene Heterostructure

Mixed-dimensional heterostructures consisting of zero- and two-dimensional materials offer a promising platform for optoelectronic devices, as the versatility of material combination allows tunable optical properties. Bias-induced approaches provide an additional means to tune the optical properties beyond the intrinsic band alignment of van der Waals junctions. Here, bias-induced tunneling characteristics are achieved in vertically stacked WSe₂/h-BN/CdSe quantum dots/graphene heterostructures by employing the top graphene electrode to regulate carrier transport across the h-BN barrier. The electrical analyses based on the Simmons approximation demonstrate tunneling-mediated charge transfer through thin h-BN layers and bias-dependent modulation of the barrier height. Furthermore, tunneling-induced exciton dissociation in WSe₂ and CdSe QDs is observed through spectral responsivity and scanning photocurrent measurements. This work establishes a voltage-dependent tunneling platform that enables deterministic control of carrier dynamics in mixed-dimensional optoelectronic devices.