Flexible Quantum Dot Light-Emitting Array Devices via Direct Photolithography Using a Self-Cross-linkable Polymer

Direct photolithographic patterning of quantum dots (QDs) through polymer cross-linking enables a ligand-nondestructive route for fabricating integrated optoelectronic devices. Herein, a photosensitizer-free, self-cross-linkable polymer is employed, which forms a three-dimensional network upon UV irradiation, effectively confining QD nanoparticles and enabling high-precision QD arrays. Furthermore, this polymer seamlessly constructs a charge barrier layer surrounding the QD arrays, which effectively suppresses the leakage current in QD light-emitting devices (QLEDs). By incorporation of a dual-layer electron transport architecture, the flexible QLEDs achieve a peak external quantum efficiency of 10.4%. These findings demonstrate a viable and scalable approach for the fabrication of full-color, high-resolution QLEDs via direct photolithography.