Hidden Dember Effect in WSe2
Keming Zhao1, Qiang Wan1, Enting Li1
1Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
None:
The Dember effect is highly valuable for energy harvesting, photodetection, catalysis, and terahertz radiation generation. However, the realization of the Dember effect in transition metal dichalcogenides (TMDs) has been rarely reported, primarily due to the requirement for high photogenerated carrier density and its complex coupling with surface photovoltage (SPV), charging, and space charge effects. Here, we reveal a hidden Dember effect in the typical TMD semiconductor WSe2 via angle-resolved photoemission spectroscopy. By tracking light-intensity-dependent band shifts across the ultraviolet/visible wavelength range, we directly disentangle the hitherto hidden Dember effect from the intertwined SPV and charging effects. Furthermore, we demonstrate control of the hidden Dember effect by tuning the photogenerated carrier density in quasi-equilibrium via illumination brightness, temperature, and bulk dopant concentration. This work not only extends the scope of the Dember effect to layered semiconductors but also elucidates the significant impacts of light-matter interactions in the low-illumination and low-temperature region.
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