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Stable Antisymmetric Magnetoresistance in Fe3GaTe2/InSe/Fe3GaTe2 van der Waals Heterostructures With Multi-State
Bo Zhang1, Lianying Zhu1, Zhiwen Chen1
1Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, China.
Advanced Materials (Deerfield Beach, Fla.)
|May 7, 2026
Summary
Researchers demonstrated multi-state antisymmetric magnetoresistance (ASMR) in a Fe3GaTe2/InSe/Fe3GaTe2 heterostructure. This breakthrough enables stable, high-density multi-state memory applications with tunable resistance states.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Ferromagnetic van der Waals (vdW) heterostructures are key for spintronics.
- Antisymmetric magnetoresistance (ASMR) offers potential for multi-state memory but faces challenges in stability and functionality.
- Achieving stable, diverse multi-state functionalities in ASMR devices is crucial for technological advancement.
Purpose of the Study:
- To demonstrate multi-state ASMR signals in a Fe3GaTe2/InSe/Fe3GaTe2 vdW heterostructure.
- To investigate the temperature-induced behavior and stability of ASMR signals.
- To explore the potential for enhanced multi-state memory density and device compatibility.
Main Methods:
- Fabrication of Fe3GaTe2/InSe/Fe3GaTe2 vdW heterostructures.
- Measurement of ASMR signals under varying temperatures, bias currents, and magnetic field angles.
- Analysis of the correlation between ASMR shape reversal and coercive fields.
Main Results:
- Demonstration of multi-state ASMR signals operating up to 320 K.
- Observation of a temperature-induced shape reversal in ASMR, linked to coercive field crossover.
- Achieved an unconventional four-state ASMR with distinct resistance levels.
- Exhibited superior signal stability across wide ranges of bias current and magnetic field angle.
- Presented programmable prototype devices with highly distinguishable states.
Conclusions:
- The Fe3GaTe2/InSe/Fe3GaTe2 heterostructure enables stable multi-state ASMR.
- The observed phenomena pave the way for high-density multi-state memory applications.
- Perfect Fermi level alignment ensures compatibility with CMOS circuits, facilitating practical implementation.
Keywords:
Fe3GaTe2/InSe/Fe3GaTe2 van der Waals heterostructureantisymmetric magnetoresistancemulti‐state functionalityroom‐temperatureshape reversalMore Related Videos
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