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Competing Surface and Subsurface Carrier Dynamics Resolved by Voltage-Tunable Scanning Ultrafast Electron Microscopy.

Junheng Pan1, Bozhou Zhang1, Xiang Chen2

  • 1School of Physical Science and Technology, Guangxi University, Nanning 530004, China.

The Journal of Physical Chemistry Letters
|May 8, 2026
PubMed
Summary

Detector bias in scanning ultrafast electron microscopy (SUEM) allows depth-selective probing to distinguish surface recombination from subsurface transport. This technique successfully disentangles competing dynamics in optoelectronics.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Surface Science

Background:

  • Distinguishing surface recombination from subsurface transport is crucial for optoelectronic devices.
  • Scanning ultrafast electron microscopy (SUEM) faces challenges in separating these dynamics due to signal convolution.

Purpose of the Study:

  • To develop a depth-selective probing method using detector bias (Vf) in SUEM.
  • To spatially disentangle competing surface and subsurface charge dynamics.

Main Methods:

  • Utilized detector bias (Vf) in SUEM experiments on p-type silicon.
  • Performed multiphysics simulations to model charge distributions and contrast evolution.

Main Results:

  • Demonstrated voltage-tunable contrast inversion, indicating a transition between surface- and subsurface-dominated regimes.
  • Mechanistically linked contrast changes to competition between surface potential restoration and subsurface band flattening.
  • Successfully isolated surface trapping from subsurface diffusion.

Conclusions:

  • Detector bias (Vf) provides effective depth-selective probing in SUEM.
  • Achieved independent visualization of spatially entangled surface and subsurface processes.
  • Established a physical basis for resolving vertical carrier stratification in near-surface regions.