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Related Experiment Video

Updated: May 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Bidirectional Size Control for Angstrom-Scale Graphene Pores by Competitive Growth and Etching.

Ceren Kocaman1, Mojtaba Chevalier1, Yueqing Shen1

  • 1Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Rue de l'Industrie 17, 1950 Sion, Switzerland.

Nano Letters
|May 8, 2026
PubMed
Summary

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Researchers developed a new method for precisely controlling angstrom-scale pores in graphene, crucial for advanced gas separation. This technique uses simultaneous growth and etching to create highly selective porous graphene materials.

Area of Science:

  • Materials Science
  • Chemical Engineering
  • Nanotechnology

Background:

  • Precise control over angstrom-scale pores in graphene is essential for gas separation applications but remains a significant challenge.
  • Existing pore formation methods often result in broad pore-size distributions, including nonselective nanometer-scale pores.

Purpose of the Study:

  • To develop a novel strategy for precise control over angstrom-scale pore dimensions in graphene.
  • To overcome the limitations of current pore formation techniques and enhance graphene's molecular sieving capabilities.

Main Methods:

  • Utilized simultaneous competitive growth and etching during chemical vapor deposition (CVD).
  • Employed methane (CH4) as a carbon precursor and carbon dioxide (CO2) as a mild etchant.
  • Investigated pore shrinkage mechanisms using carbon isotope labeling.
Keywords:
bidirectional size controlgas separationporous graphenetuning pore sizevacancy defects

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Main Results:

  • Established a continuous kinetic regime where pore expansion and shrinkage are controlled by gas-phase composition.
  • Demonstrated that pore shrinkage occurs via edge-mediated lattice reconstruction fueled by CH4, with CO2 acting as an etchant.
  • Achieved systematic contraction of nanometer-scale pores into angstrom-scale apertures.

Conclusions:

  • The competitive growth-etching interplay provides a method for postsynthetic control of defect dimensions in 2D materials.
  • The resulting porous graphene exhibits significantly improved molecular sieving behavior.
  • This approach offers a general framework for tailoring pore sizes in graphene for advanced separation technologies.