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Updated: May 11, 2026

Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride
Published on: July 8, 2021
Unlocking Superconductivity in NdFeAsO via Uranium-Mediated Electron Doping.
Weiyi Liu1,2, Xuwen He2, Dengpeng Yuan2
1Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China.
Uranium doping of NdFeAsO superconductors effectively suppresses spin-density waves and induces superconductivity. The optimally doped material exhibits a critical temperature of 47.5 K, demonstrating a new route for iron-based superconductors.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid State Chemistry
Background:
- 1111-type iron-based superconductors (IBS) feature layered structures with potential for carrier doping.
- NdFeAsO is a representative IBS with alternating charge-reservoir Nd2O2 and conducting Fe2As2 layers.
Purpose of the Study:
- To investigate the effects of uranium (U) substitution at the Nd site in NdFeAsO.
- To explore U doping as a method to induce superconductivity in 1111-family IBS.
Main Methods:
- Synthesis of a series of Nd1-xUxFeAsO samples.
- Rietveld refinement of X-ray diffraction (XRD) patterns to analyze crystal structure.
- X-ray photoelectron spectroscopy (XPS) to confirm U substitution and doping type.
- Electrical transport measurements to study magnetic transitions and superconductivity.
Main Results:
- Successful synthesis of Nd1-xUxFeAsO with systematic lattice contraction upon U incorporation.
- XPS confirmed U4+ substitution for Nd3+, indicating electron doping.
- U doping suppressed the spin-density wave (SDW) transition and induced bulk superconductivity for 0.15 ≤ x ≤ 0.25.
- Optimal doping (x=0.25) yielded a superconducting critical temperature (Tc) of 47.5 K with high upper critical field (Hc2).
Conclusions:
- Uranium doping is an effective strategy for achieving superconductivity in 1111-family iron-based superconductors.
- This study provides a new avenue for tuning the electronic properties of IBS.
- The observed high Tc and Hc2 in U-doped NdFeAsO highlight its potential for advanced applications.
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