All-Solid-State, Ferroelectric-Graded-Doping Reconfigurable Molybdenum Ditelluride Devices

2D material-based reconfigurable devices present a compelling approach to advancing system integration and functionality in the post-Moore era. The all-solid-state design offers enhanced reliability and scalability of reconfigurable devices. However, realizing multifunctional reconfigurability in simple all-solid-state configurations remains a significant challenge. In this work, we address this challenge through a ferroelectric-graded-doping (FeGD) strategy to develop an all-solid-state 2D reconfigurable device featuring both structural simplicity and functional richness. The device incorporates a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer coupled with a 2D ambipolar MoTe₂ channel, enabling the integration of 12 distinct reconfigurable functionalities within a single-gate device structure. These functionalities span nonvolatile memory operations, neuromorphic computing capabilities including both homosynaptic and heterosynaptic plasticity, as well as multiple in-memory logic operations. The device demonstrates exceptional performance metrics, achieving a sub-millisecond reconfiguration speed (<1 ms), an extended retention time up to 10⁷ s and outstanding on/off ratio exceeding 10⁶ for nonvolatile memory operations, and large on/off ratios higher than 10³ for fundamental logic operations (NAND, AND, OR, and NOR) and even more complex logic functions (IMP, RIMP, NIMP, and RNIMP), thereby establishing a versatile platform for next-generation reconfigurable electronics.