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High-performance 2D MoTe2-based photodetectors with superior Vis-NIR detection capability.

Xin Wang1,2,3, Qingyu Zhou4, Junkai Shen4

  • 1GRINM National Engineering Research Center for Key Materials of Integrated Circuits Beijing 100088 China wangxin@gritek.com tuhl@grinm.com zhangguohu@gritek.com.

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|May 11, 2026
PubMed
Summary

This study enhances two-dimensional (2D) molybdenum ditelluride (MoTe2) photodetectors through air annealing, significantly improving performance. Optimized MoTe2 and MoTe2/MoSe2 heterojunctions show high responsivity for advanced optoelectronic applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials offer enhanced properties for photoelectric conversion.
  • Photodetectors are vital for intelligent sensing, requiring high performance.

Purpose of the Study:

  • Investigate 2H-MoTe2-based field-effect transistors (FETs) for photodetection.
  • Optimize MoTe2 photodetector performance through annealing and heterojunction formation.

Main Methods:

  • Air annealing of 2H-MoTe2 at specific temperatures.
  • Fabrication and characterization of MoTe2 FETs and MoTe2/MoSe2 van der Waals heterojunctions.
  • Performance evaluation including responsivity, external quantum efficiency (EQE), and dark current.

Main Results:

  • Air annealing improved transconductance by 230% and carrier mobility by 41% in MoTe2 FETs via defect healing.
  • Optimized MoTe2 photodetector achieved responsivity of 3.53 A W⁻¹ and EQE of 652% at 808 nm.
  • MoTe2/MoSe2 heterojunction exhibited ultralow dark current (<10⁻¹³ A) and peak responsivity of 3.32 A W⁻¹ at 671 nm.

Conclusions:

  • Air annealing is an effective method to enhance charge transport in 2D MoTe2 for photodetection.
  • MoTe2 and its heterojunctions demonstrate significant potential for high-performance visible-to-near-infrared (Vis-NIR) optoelectronic applications.