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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: May 12, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

Achieving 27.7% Efficiency with a Mechanically Stacked, Four-Terminal Perovskite/InGaAsP Tandem Solar Cell.

Bikesh Gupta¹, The Duong², Tuomas Haggren^1,3

¹Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra Australia.

|May 11, 2026

Summary

This study presents a novel perovskite/InGaAsP tandem solar cell, achieving 27.7% efficiency. This mechanically stacked design simplifies fabrication for highly efficient, flexible solar cells.

Keywords:

InGaAsP carrier‐selective contact passivation perovskite solar cells tandem

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Last Updated: May 12, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

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Published on: November 5, 2014

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

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Published on: February 27, 2017

Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Area of Science:

Materials Science
Renewable Energy
Semiconductor Physics

Background:

Multijunction solar cells surpass single-junction limits, exceeding the Shockley-Queisser limit.
III-V semiconductors are key for tunable bandgaps in multijunction cells, but require complex epitaxial growth and lattice-matched tunnel junctions.

Purpose of the Study:

To develop a mechanically stacked perovskite/InGaAsP tandem solar cell as an alternative to conventional all-III-V dual-junction cells.
To simplify fabrication by removing the need for lattice-matched tunnel junctions.

Main Methods:

Fabrication of a low-bandgap InGaAsP solar cell using carrier-selective contacts.
Integration of the InGaAsP cell with a semi-transparent perovskite top cell in a four-terminal tandem configuration.

Main Results:

Achieved 19.0% efficiency and 657 mV open-circuit voltage for the InGaAsP solar cell.
Attained a 27.7% power conversion efficiency and 1.7 V open-circuit voltage for the perovskite/InGaAsP tandem solar cell.

Conclusions:

The mechanically stacked tandem solar cell offers a simplified fabrication pathway.
This approach enables highly efficient, thin-film, flexible dual-junction solar cells.