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Published on: July 1, 2019
Electron transport in solids at keV energies: Improved Monte Carlo simulation of backscattering and absorption
Ouidad Moussaoui1, Abdelouahab Bentabet2, Abdelhalim Kahoul3
1Laboratory of Materials Physics, Radiation and Nanostructures (LPMRN), Faculty of Sciences and Technology, Mohamed El Bachir El Ibrahimi University, Bordj-Bou-Arreridj, 34030, Algeria; Department of Matter Sciences, Faculty of Sciences and Technology, Mohamed El Bachir El Ibrahimi University, Bordj-Bou-Arreridj, 34030, Algeria; Laboratoire de caractérisation et valorisation des ressources naturelles, Université de Bordj-Bou-Arreridj, 34030, Algeria.
Abstract:
Monte Carlo simulations are performed to investigate the interaction of 1-10 keV electron beams with semi-infinite solid targets, focusing on absorption and backscattering transport phenomena. We provide through this study a comprehensive estimation of a variety of essential parameters such as mean penetration depths, range, stopping profiles and backscattering coefficients for targets of carbon (C), silicon (Si), aluminum (Al), copper (Cu), germanium (Ge), palladium (Pd), silver (Ag), platinum (Pt) and gold (Au). To enrich the work, we simultaneously used the Penelope code and the dielectric model during our calculations. A new fitting function is proposed to describe the stopping profiles achieving a significant improvement in the precision of electron transport simulations. Both the analytical and simulated results show good agreement with the experiment and previous theoretical work.
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