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Updated: May 13, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Precisely Controllable Generation and Characterization of Graphene Nanogaps
Chong Liu1, Menglan Li1,2, Fenfa Yao3
1Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
None:
Electrode pairs with sub-3 nm nanogaps are essential for single-molecule devices. However, previously reported nanogap fabrication techniques are stochastically driven and often lead to nanogaps with broad resistance distributions. Here, we present a deterministic method for the precise generation of single-layer graphene nanogaps by controlling the electric breakdown process. Using autoranging source-measure hardware and adopting different control logics before and after breakdown, the gap generation process could be well-controlled. About 80% of devices fall within the same order of magnitude in nanogap resistance, which can be tuned by the termination parameter. Moreover, the SLG nanogaps are directly visualized on Si3N4 membrane windows by using transmission electron microscopy. This work establishes a robust approach for controlled SLG nanogap fabrication with sub-3 nm separations, paving the way toward the high yield of single-molecule junctions and related solid-state devices.

