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Updated: May 13, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Precisely Controllable Generation and Characterization of Graphene Nanogaps.

Chong Liu1, Menglan Li1,2, Fenfa Yao3

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

Nano Letters
|May 12, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed a deterministic method for fabricating single-layer graphene nanogaps. This technique precisely controls electric breakdown, enabling high-yield production of sub-3 nm gaps for single-molecule devices.

Keywords:
TEM characterizationelectric breakdownfeedback controlgraphene nanogapstunneling junctions

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Sub-3 nm nanogaps are critical for single-molecule electronic devices.
  • Existing fabrication methods are stochastic, leading to inconsistent nanogap sizes and resistance distributions.

Purpose of the Study:

  • To present a deterministic method for precise single-layer graphene nanogap fabrication.
  • To overcome the limitations of stochastic fabrication techniques for nanogap devices.

Main Methods:

  • Controlled electric breakdown of single-layer graphene.
  • Utilizing autoranging source-measure hardware with distinct control logics before and after breakdown.
  • Direct visualization of nanogaps using transmission electron microscopy.

Main Results:

  • Achieved deterministic generation of single-layer graphene nanogaps with sub-3 nm separations.
  • Approximately 80% of fabricated devices exhibited nanogap resistance within the same order of magnitude.
  • Demonstrated tunability of nanogap resistance via the termination parameter.

Conclusions:

  • Established a robust and controllable approach for fabricating single-layer graphene nanogaps.
  • This method facilitates high-yield production of single-molecule junctions and solid-state devices.
  • Paves the way for advanced nanoscale electronic applications.