Reduction Processes in Thin-Film Vanadium Oxides for Application in Optoelectronic Devices

This article describes a study on the synthesis and annealing processes of thin-film coatings of vanadium oxide on flat, parallel substrates made of quartz glass, sapphire, and silicon, as well as optical fibers using an organometallic precursor, triisopropoxy vanadium (V) oxide. For the first time, optical constants of nanomaterials were estimated in real time during synthesis and subsequent annealed using the lossy-mode resonance effect. The coatings produced in an inert atmosphere after deposition were amorphous, comprising a mixture of VO₂, V₂O₅, V₆O₁₃, and V₃O₅. This method allowed for accurate determination of the threshold temperature for the transformation of oxide mixtures into a monocomponent phase. Optimal conditions for synthesis and annealing were determined for the production of vanadium dioxide (VO₂) and pentoxide (V₂O₅). Morphological changes in coated surfaces were observed as a result of heat treatment. The composition and properties of these samples were studied using optical, terahertz and Raman spectroscopy, as well as temperature-dependent analysis of electrical resistance. The morphology of the coating surface was determined using a scanning electron microscope and an atomic force microscope. The reduction of VO_x to VO₂ was studied in an atmosphere of hydrogen and argon during annealing after deposition, with its effectiveness being compared. It was shown for the first time that the reduction of higher vanadium oxides is due to the presence of elemental carbon in the volume of the material formed from a metalorganic precursor during growth of vanadium oxide. Coatings obtained by annealing in hydrogen had a smaller hysteresis loop width (~5 °C) during phase transition compared to coatings obtained by argon annealing (~9 °C). Both types of coatings demonstrated a 50-60% increase in transmission at 1 THz frequency and in the IR region, accompanied by a 10³-10⁴-fold change in electrical resistance.