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Carrier Transport Control for Enhanced Performance in Dual-Color Quantum Well Infrared Photodetectors.

Zhen Chen^1,2, Rui Xin^2,3, Shenjun Wang^1,2

¹School of Microelectronics, Shanghai University, Shanghai 201800, China.

Nanomaterials (Basel, Switzerland)

|May 12, 2026

Summary

Researchers improved dual-color quantum well infrared photodetectors (QWIPs) by reducing dark current. Sample B demonstrated a fourfold increase in peak blackbody detectivity compared to Sample A, showcasing an effective strategy for enhanced photodetector performance.

Keywords:

dark current dual-color quantum well infrared photodetector scanning spreading resistance microscopy secondary ion mass spectrometry

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Area of Science:

Optoelectronics
Materials Science
Solid State Physics

Background:

Infrared photodetectors are crucial for military, medical, and environmental sensing.
Dual-color quantum well infrared photodetectors (QWIPs) offer multi-spectral capabilities but suffer from high dark current.
Optimizing QWIP performance requires addressing dark current limitations.

Purpose of the Study:

To design and fabricate dual-color QWIPs with reduced dark current and improved detectivity.
To investigate the impact of carrier distribution and barrier design on QWIP performance.
To establish an effective strategy for enhancing dual-color QWIPs.

Main Methods:

Fabrication of two distinct dual-color QWIP samples (Sample A and Sample B).
Characterization using secondary ion mass spectrometry (SIMS) and scanning spreading resistance microscopy (SSRM).
Energy-band simulations and optoelectronic measurements (current-voltage, responsivity, detectivity).

Main Results:

Sample B exhibited significantly reduced dark current (two orders of magnitude) and a nearly symmetric I-V characteristic compared to Sample A.
Sample B showed a larger disparity in effective carrier distribution between quantum well groups.
Higher barrier design in Sample B led to reduced thermally activated transport and a fourfold increase in peak blackbody detectivity at 50 K and -1.5 V.

Conclusions:

A larger inter-group carrier disparity, combined with higher barrier design, effectively reduces dark current in dual-color QWIPs.
This approach improves the trade-off between dark current suppression and blackbody responsivity, leading to enhanced peak blackbody detectivity.
Controlled carrier distribution and barrier engineering are key strategies for optimizing dual-color QWIP performance.