Two-Dimensional MoSe₂ Schottky-Barrier Transistors for Application in On-Chip Thermal Sensing

Area of Science:

• Materials Science
• Condensed Matter Physics
• Electrical Engineering

Background:

• Field-effect transistors (FETs) are crucial components in integrated circuits.
• On-chip thermal sensing is vital for monitoring and managing heat in electronic devices.
• Transition-metal dichalcogenides (TMDs) like MoSe2 offer unique electronic properties.

Purpose of the Study:

• To investigate the potential of MoSe2-based multilayer FETs for on-chip thermal sensing applications.
• To analyze the temperature dependence of current in FETs with Schottky-barrier (SB) contacts.
• To demonstrate the feasibility of using these devices for effective thermal sensing.

Main Methods:

• Fabrication of MoSe2-based multilayer FETs with SB contacts.
• Characterization of the temperature dependence of transistor current in both thermionic and tunneling regimes.
• Theoretical modeling using a Landauer-formula-based treatment of tunneling transmission.
• Integration with a resistive line to simulate heat generation in integrated circuits.

Main Results:

• Demonstrated a strong, exponential temperature dependence of the drain current in SB FETs.
• Quantitatively explained the observed behavior using a Landauer-formula-based model.
• Showcased effective thermal sensing by measuring transistor drain current in the subthreshold regime.
• Confirmed the potential for heterogeneous integration of these sensing devices.

Conclusions:

• MoSe2-based SB FETs exhibit significant potential for highly sensitive on-chip thermal sensing.
• The strong temperature dependence of current in these devices is well-described by tunneling transmission models.
• These FETs are suitable for heterogeneous integration, broadening their applicability in advanced electronic systems.