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High-Performance Terahertz Photodetectors Based on Spiral Structure-Regulated Graphene
Lei Yang1, Bohan Zhang2, Yingdong Wei3,4
1School of Microelectronics, Shanghai University, 20 Chengzhong Road, Shanghai 201899, China.
Sensors (Basel, Switzerland)
|May 13, 2026
Summary
This study presents a novel terahertz (THz) photodetector using graphene, achieving high sensitivity and fast response times at room temperature. The device predominantly utilizes the photothermoelectric (PTE) effect for improved THz detection.
Area of Science:
- Optoelectronics
- Materials Science
- Physics
Background:
- Terahertz (THz) technology offers vast application potential, especially in photodetection.
- Current THz detectors face limitations in sensitivity, speed, operating temperature, and bandwidth.
- Graphene field-effect transistors (GFETs) show broadband, room-temperature THz response, but disentangling PTE and plasma-wave effects is difficult.
Purpose of the Study:
- To develop a novel THz photodetector overcoming limitations of existing technologies.
- To predominantly utilize the photothermoelectric (PTE) effect in a single graphene device.
- To unambiguously identify the dominant operating mechanism in the THz photodetector.
Main Methods:
- Utilized monolayer graphene as the photoactive material in a single device architecture.
- Designed a novel counterclockwise spiral antenna to facilitate the PTE effect.
- Systematically analyzed temporal response dynamics to identify operating mechanisms.
Main Results:
- Demonstrated a room-temperature THz photodetector driven primarily by the PTE effect.
- Achieved high sensitivity with a minimum noise equivalent power (NEP) of 80.7 pW/Hz.
- Obtained a rapid response time of less than 11 μs, confirming PTE as the dominant mechanism.
Conclusions:
- Developed a robust strategy for high-performance, room-temperature THz optoelectronics.
- The novel device design facilitates advanced practical applications.
- Paved the way for enhanced THz imaging and high-capacity wireless communications.
