C-Axis Oriented LiNbO₃ Thin Film Grown by Chemical Beam Epitaxy for Surface Acoustic Wave Device Applications

High-frequency surface acoustic wave (SAW) devices require piezoelectric thin films combining strong electromechanical coupling, high acoustic velocity, and compatibility with scalable fabrication. Lithium niobate (LiNbO₃) is a promising material, but the growth of high-quality thin films remains challenging because of lithium volatility and process-control issues. In this work, chemical beam epitaxy (CBE) was investigated as an alternative route for the deposition of c-axis-oriented LiNbO₃ thin films on C-plane sapphire at a relatively low growth temperature of 400 °C. Structural characterization confirmed high crystalline quality, with clear (006) and (0012) XRD reflections and a rocking-curve full width at half maximum of 0.04°. To evaluate acoustic performance, a SAW delay line and a one-port resonator were fabricated on 350 nm thick films using e-beam lithography. The devices operated in the 1-3 GHz range and exhibited electromechanical coupling factors of about 0.3% for the Rayleigh mode at 1.7 GHz and 3% for the Sezawa mode at 2.75 GHz. Propagation velocities ranged from 5094 to 8250 m/s, and the Rayleigh-mode resonator quality factor reached about 500. These results demonstrate the feasibility of CBE-grown LiNbO₃ films for SAW device applications.