Related Experiment Video
Updated: May 15, 2026
11:33
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Unraveling Synergistic Dual-Element Doping Mechanisms in Solid-State Synthesis via Atomic Layer Deposition-Enabled
Yifan Wu1, Tianye Xie1, Xincan Cai1
1School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
Journal of the American Chemical Society
|May 14, 2026
Summary
Atomic layer deposition (ALD) precisely controls dopant incorporation in materials. A novel synergistic effect between aluminum and tungsten enhances material performance and stability.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Nanotechnology
Background:
- High-temperature solid-state synthesis is common for doping inorganic materials.
- Conventional methods suffer from inhomogeneous mixing and side reactions, obscuring dopant behavior.
Purpose of the Study:
- To develop a precise method for investigating intrinsic doping mechanisms.
- To elucidate dopant-dopant interactions in inorganic materials.
Main Methods:
- Utilized atomic layer deposition (ALD) for sequential coating of dopant oxides (Al2O3, WO3) onto a precursor.
- Employed calcination with LiOH·H2O for dopant incorporation.
- Analyzed dopant distribution and interactions.
Main Results:
- ALD ensured uniform dopant reactions, eliminating side products.
- A synergistic effect between Al and W was observed: Al facilitated W lattice incorporation.
- Lattice-incorporated W significantly improved rate capability and high-voltage cycling stability due to robust W-O bonding.
Conclusions:
- The ALD-based model system enables precise study of doping mechanisms.
- This approach offers critical insights into multidopant interactions in solid-state synthesis.
- The findings highlight the potential for tailored material properties through controlled doping.
