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Related Concept Videos

Infrared (IR) Spectroscopy: Overview01:09

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Updated: May 15, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Published on: October 13, 2017

Short-Wave Infrared InAs Quantum-Dot Light-Emitting Diodes with Tunable Electroluminescence beyond 1.4 μm.

Hossein Roshan1, Davide Mazza1,2, Satyaprakash Panda2,3

  • 1Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy.

ACS Energy Letters
|May 14, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed new Restriction of Hazardous Substances-compliant InAs/ZnSe core/shell quantum dot (QD) light-emitting diodes (LEDs) for short-wave infrared (SWIR) applications. This breakthrough enables efficient SWIR optoelectronics without heavy metals.

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Last Updated: May 15, 2026

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12:57

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Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

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Area of Science:

  • Materials Science
  • Quantum Dot Technology
  • Optoelectronics

Background:

  • Colloidal quantum dots (QDs) are crucial for short-wave infrared (SWIR) optoelectronics.
  • Current SWIR QD technology heavily relies on hazardous heavy-metal chalcogenides like PbS and HgTe.
  • There is a need for safer, high-performance alternatives.

Purpose of the Study:

  • To develop Restriction of Hazardous Substances (RoHS)-compliant quantum dot light-emitting diodes (LEDs) for SWIR applications.
  • To demonstrate efficient electroluminescence (EL) from InAs/ZnSe core/shell QDs beyond 1100 nm.
  • To advance III-V QDs for SWIR optoelectronic systems.

Main Methods:

  • Synthesis of InAs cores using a tris-(dimethylamino)-arsine-based continuous-injection method for precise size control.
  • Fabrication of InAs/ZnSe core/shell QDs.
  • Development of a hybrid charge-injection stack with organic (poly-TPD/PTAA) and inorganic (ZnMgO) transport layers.
  • Characterization of LED performance, including electroluminescence (EL) spectra and external quantum efficiencies (EQEs).

Main Results:

  • Demonstrated RoHS-compliant InAs/ZnSe core/shell QD LEDs operating in the SWIR range.
  • Achieved EL peak emission wavelengths at 1007, 1275, 1300, and 1410 nm.
  • Reported peak external quantum efficiencies (EQEs) of 6.20%, 3.75%, 2.04%, and 1.10% for the respective LEDs.
  • Achieved the first demonstration of EL from InAs QDs beyond 1100 nm.

Conclusions:

  • The developed InAs/ZnSe core/shell QDs offer a promising, heavy-metal-free alternative for SWIR optoelectronics.
  • The hybrid charge-injection stack effectively balances charge injection for efficient light emission.
  • These findings pave the way for advanced SWIR applications in machine vision and bioimaging.