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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: May 16, 2026

Fabrication of Bi2Te3 and Sb2Te3 Thermoelectric Thin Films using Radio Frequency Magnetron Sputtering Technique
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Stabilizing Cubic GeSe via Metavalent Alloying for Enhanced Thermoelectric Performance.

Yuan Ye1, Binrong Huang1, Yugeng Li1

  • 1College of Materials Science and Engineering, Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, PR China.

ACS Applied Materials & Interfaces
|May 15, 2026
PubMed
Summary

Researchers enhanced thermoelectric performance in germanium selenide (GeSe) by stabilizing a cubic phase through metavalent alloying and vacancy engineering. This approach achieved a 13-fold increase in thermoelectric figure of merit (zT).

Keywords:
GeSeband structuremetavalent bondingphase structurethermoelectric

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Solution-Processed, Surface-Engineered, Polycrystalline CdSe-SnSe Exhibiting Low Thermal Conductivity

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Orthorhombic Germanium Selenide (GeSe) exhibits strong covalent bonding and low crystal symmetry, limiting its thermoelectric potential.
  • Developing efficient thermoelectric materials requires overcoming intrinsic constraints in crystal structure and bonding.

Purpose of the Study:

  • To stabilize a high-symmetry cubic phase of GeSe.
  • To enhance the thermoelectric performance of GeSe by overcoming limitations of the orthorhombic phase.
  • To explore synergistic effects of metavalent alloying and vacancy engineering.

Main Methods:

  • Introduced metavalent alloying using nonstoichiometric Bismuth Telluride (Bi2Te3) to induce a structural transition to a cubic phase.
  • Employed vacancy engineering and trace Cadmium (Cd) doping to suppress impurity precipitation and high-temperature phase transitions.
  • Analyzed structural, electronic, and thermal transport properties of the modified GeSe.

Main Results:

  • Stabilized a cubic phase of GeSe through Bi2Te3 alloying and Cd doping, overcoming solubility and phase instability issues.
  • Observed significant improvements in thermoelectric properties: narrowed bandgap, sharpened band edges, enhanced band degeneracy, softened bonding, and increased lattice anharmonicity.
  • Achieved a peak thermoelectric figure of merit (zT) of 0.64 at 723 K, a 13-fold enhancement compared to pristine orthorhombic GeSe.

Conclusions:

  • Metavalent alloying combined with vacancy engineering is an effective strategy for stabilizing high-symmetry phases in low-symmetry chalcogenides.
  • The stabilized cubic GeSe demonstrates significantly enhanced thermoelectric performance.
  • This approach offers a general pathway for optimizing thermoelectric materials.