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Updated: May 16, 2026

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of Chalcogenidoplumbates(II or IV)
Published on: December 29, 2016
Investigations of heavy p-block elements (Sn, Sb, Bi) in 2-amino-5-methylpyridinium halogenometallate complexes:
Mohamed Loucif1, Iheb Garoui2, Souad Chkoundali2
1Laboratory of Materials Chemistry and Applications, Faculty of Sciences and Technology, Tissemsilt University Algeria loucif.mohamed@univ-tissemsilt.dz.fr.
Abstract:
The interaction between 2-amino-5-methylpyridinium and heavy p-block metal chlorides (Sn, Sb, and Bi) results in the formation of three hybrid compounds: (C6H9N2)2SnCl6, (C6H9N2)3[BiCl6], and (C6H9N2)2[Sb2Cl8]. Their structural, optical, and electrical properties were systematically examined by powder X-ray diffraction, UV-visible spectroscopy, and complex impedance spectroscopy in order to elucidate the effect of metal-center substitution on their physical behavior. Optical analysis reveals a gradual narrowing of the band gap from Sb- to Bi-containing compounds. The estimated band gap energies are 3.49 eV for (C6H9N2)2[Sb2Cl8], 3.36 eV for (C6H9N2)2SnCl6, and 3.10 eV for (C6H9N2)3[BiCl6], indicating enhanced electronic delocalization with increasing atomic number. Electrical measurements demonstrate a negative temperature coefficient of resistance (NTCR) for all samples in the temperature range 343-383 K, confirming their semiconducting character. The DC conductivity exhibits thermally activated behavior consistent with the Arrhenius model. The calculated activation energies are 0.71 eV (Sb-based), 0.54 eV (Sn-based), and 0.40 eV (Bi-based). Although the Bi-containing compound shows the lowest activation energy, the overall conductivity decreases in the order (C6H9N2)2[Sb2Cl8] > (C6H9N2)2SnCl6 > (C6H9N2)3[BiCl6]. These findings highlight that metal-ion substitution represents an effective approach to modulate the electronic structure and charge transport properties of 2-amino-5-methylpyridinium-based hybrid materials, underscoring their potential for semiconducting and electronic device applications.
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