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Artificial and Controllable Bubble Platforms for Systematic Band Structure Engineering of Few-Layer WS2.
Tianjian Ou1, Cong Xiao1, Xiaoxiang Wu2
1School of Physics, Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control, Zhejiang University, Hangzhou 310027, P. R. China.
ACS Applied Materials & Interfaces
|May 16, 2026
Summary
Controlled strain engineering using interfacial bubbles in two-dimensional semiconductors like WS2 allows precise tuning of electronic properties. This method enables deterministic control over band structure and exciton behavior for advanced optoelectronic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Interfacial bubbles in 2D semiconductors create strain fields.
- Strain engineering is key for tuning electronic and excitonic properties.
Purpose of the Study:
- To develop reproducible bubble platforms for strain engineering in few-layer WS2.
- To investigate the layer-dependent effects of strain on excitonic pathways.
Main Methods:
- Controlled exfoliation of WS2 onto Au films.
- Fabrication of artificial PDMS spherical caps for bubble formation.
- Analysis of strain-induced changes in band structure and exciton emission.
Main Results:
- Tensile strain from bubbles reconstructs excitonic pathways in a layer-dependent manner.
- Monolayer WS2 shows significant band gap tunability and enhanced trion emission.
- Bilayer and trilayer WS2 exhibit modified indirect exciton emission and activation of dark/forbidden states.
Conclusions:
- Bubble-induced strain offers a programmable method for exciton control.
- This technique enables deterministic band-structure and exciton engineering in 2D semiconductors.
- Potential for designing novel optoelectronic devices with tailored properties.
