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Three-Dimensional Garment Architectures for Tactile Embodied Intelligence
Junhua Huang1, Xuchun Gui1, Zhenxi Dai1
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China.
None:
Sensory-neuromorphic computing endows wearable devices with capabilities of environmental perception and active service, acting as a pivotal driver for the revolution in human-computer interaction. However, its implementation in textile electronics is hampered by incompatibility between conventional electronic device structures and the fabric-woven manufacturing methodology. Here, we demonstrate a tactile-neuromorphic interface integrating a textile-type resistive random-access memory (RRAM) array for constructing human-machine sensing-computing interactive systems. The 3D stacked TiO2/Ti3C2Tx textile RRAM exhibits an order-of-magnitude reduction in switching voltage (85 mV) compared to prevailing counterparts, ultra-stable resistive switching over 103 operation cycles with ultralow 1.15% LRS coefficient of variation, ideal for actualizing weavable neuromorphic computing. An all-textile integrated near-sensor computing system, featuring monolithically co-integrated pressure sensor and RRAM arrays, demonstrates quasi-linear conductance modulation under pressure stimuli, allowing for the embedded computation-memory nodes knitted into garment textiles to achieve in situ tactile processing for contactless vehicular maneuvering. This work demonstrates the potential to integrate an embedded sensing-logic-memory electronic device into smart textiles, propelling a transformative paradigm shift in human-machine interaction.
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