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High-Yield Engineering and Identification of Oxygen-Related Modified Divacancies in 4H-SiC
Qi-Cheng Hu1,2,3,4, Ji-Yang Zhou1,2,3, Shuo Ren1,2,3,4
1Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Advanced Materials (Deerfield Beach, Fla.)
|May 16, 2026
Summary
Engineered oxygen-vacancy complexes in silicon carbide (SiC) offer high yields for quantum applications. This research identifies four types of these defects, paving the way for advanced solid-state quantum technologies.
Area of Science:
- Materials Science
- Quantum Information Science
- Solid-State Physics
Background:
- Modified divacancies in 4H silicon carbide (SiC) are promising for quantum applications due to room-temperature charge stability and spin addressability.
- Challenges include low formation yields and difficulties in structural identification, limiting their practical use.
Purpose of the Study:
- To develop a controllable, high-yield method for engineering and identifying oxygen-related modified divacancy color centers in 4H-SiC.
- To elucidate the atomic structure and properties of these engineered defects for quantum technology applications.
Main Methods:
- Oxygen-ion implantation into 4H-SiC to create defects.
- Optical and spin-resonance spectroscopy to characterize defect properties.
- Isotope-resolved hyperfine interaction measurements using oxygen-17 to determine atomic structure.
Main Results:
- Successfully engineered and identified four distinct types of oxygen-vacancy (OV) complexes in 4H-SiC.
- OV centers constitute over 90% of the defect population, outperforming conventional defects in optical properties and spin coherence.
- Characterized zero-phonon lines and temperature-dependent spin-readout contrast, observing Rabi oscillations in high-density ensembles.
Conclusions:
- Established a high-yield, scalable method for creating specific oxygen-related divacancies in 4H-SiC.
- Clarified the atomic structure of these OV complexes, identifying four crystallographic configurations.
- The findings open new avenues for developing robust solid-state quantum technologies.
