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Updated: May 19, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Muhammad Zeeshan1,2,3, Zhiyong Bai1, Kaijie Xie1,2,3
1State Key Laboratory of Functional Crystal and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, P. R. China.
New defect diamond-like chalcogenides, ZnIn2Se4 and CdIn2Se4, show strong nonlinear optical (NLO) properties. These materials offer excellent infrared transparency and high laser-induced damage thresholds for advanced NLO applications.
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