Plasma-Enhanced Atomic Layer Deposition Synthesis of Nanolayered Molybdenum Diselenide (MoSe₂) Thin Films for...

Nanolayered molybdenum diselenide (MoSe₂) thin films were synthesized by plasma-enhanced atomic layer deposition (PE-ALD) using molybdenum pentachloride (MoCl₅) and diethyldiselenide (C₄H₁₀Se₂) precursors. Scanning and transmission electron microscopy revealed horizontally stacked nanolayers near the substrate and vertically oriented nanosheets at the surface of the film. X-ray diffraction confirmed the (002), (100), and (110) reflections of crystalline MoSe₂, while X-ray photoelectron spectroscopy showed relative atomic concentrations of 33.5% Mo and 66.5% Se, consistent with stoichiometric MoSe₂. Raman spectra exhibited characteristic E _1g, A _1g, and E ¹ _2g vibrational modes. Field-effect transistors incorporating PE-ALD-grown MoSe₂ as the channel material displayed p-type behavior, demonstrating the potential of nanolayered MoSe₂ for nanoelectronic applications. This work demonstrates the feasibility of low-temperature, stoichiometric growth of nanolayered MoSe₂ by PE-ALD and its direct integration into transistor architectures.