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Molecular Design Toward High-Performance Solution-Processable Push-Pull Zinc(II) Porphyrin-Based Resistive Memory

Ka Wai Kwong1,2, Hing Chan1, Ming-Yi Leung1,2

  • 1Department of Chemistry The University of Hong Kong Hong Kong P. R. China.

Small Science
|May 18, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed novel zinc(II) porphyrin complexes for high-performance organic resistive memory devices. These materials exhibit distinct ternary states and long retention times, paving the way for advanced multilevel memory applications.

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Nanotechnology

Background:

  • Organic resistive memory devices offer potential for low-cost, flexible electronics.
  • Developing materials with multiple stable resistive states is crucial for multilevel data storage.

Purpose of the Study:

  • To design and synthesize zinc(II) porphyrin-based donor-acceptor (D-A) complexes for solution-processable resistive memory devices.
  • To investigate the structure-property relationships governing ternary memory behaviors.

Main Methods:

  • Synthesis and characterization of zinc(II) porphyrin-based D-A complexes.
  • Fabrication and testing of solution-processable resistive memory devices.
  • Photophysical, electrochemical, and computational studies.

Main Results:

  • Demonstrated high-performance ternary memory devices with current ratios of 1:10^3:10^6 for OFF, ON1, and ON2 states.
  • Achieved a long retention time exceeding 20,000 seconds.
  • Utilized weak electron-donating and withdrawing units to achieve ternary memory behaviors.

Conclusions:

  • Ternary memory behaviors are attributed to charge-trapping in the porphyrin core and D-A moiety charge transfer.
  • Established a clear structure-property relationship for the memory devices.
  • Provided design strategies for developing advanced multilevel organic resistive memory devices.