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Updated: May 19, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Ka Wai Kwong1,2, Hing Chan1, Ming-Yi Leung1,2
1Department of Chemistry The University of Hong Kong Hong Kong P. R. China.
Researchers developed novel zinc(II) porphyrin complexes for high-performance organic resistive memory devices. These materials exhibit distinct ternary states and long retention times, paving the way for advanced multilevel memory applications.
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