Beams with Symmetric Loadings
Beams with Unsymmetric Loadings
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Updated: May 20, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Weixia Zhao1, Lingchao Bai2, Lixin Zhang3
1Research Department of Micro-nano Fabrication Technology and Intelligent Electronic Device, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China.
Optimizing multi-beam electron optical systems (MBEOS) involves controlling aberrations. This study presents a simplified method to minimize off-axis aberrations, enabling larger usable beamlet areas for high-throughput applications.
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