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Updated: May 20, 2026

Thermal Measurement Techniques in Analytical Microfluidic Devices
Published on: June 3, 2015
Multi-channel thermal transport mechanisms in high-power GaN-Based micro/nano-devices
Yuxing Wang1, Shuyue Shan1, Yuqing Zhao1
1Center for Phononics and Thermal Energy Science, China-EU Joint Lab for Nanophononics, MOE Key Laboratory of Advanced Micro-structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China.
Abstract:
Multi-channel thermal transport mechanisms in high-power GaN-based systems are critical for advanced thermal management in next-generation electronics due to their wide bandgap, high breakdown electric field, and strong thermal stability. Recent works have highlighted the complex heat dissipation processes in GaN-based systems under high-power operation, prompting significant demands in understanding the underlying principles. Here, we review recent experimental and theoretical progress in thermal transport in high-power GaN-based systems from a multi-channel perspective, with particular emphasis on the coupling among non-equilibrium heat generation, hot electron/phonon dynamics, interfacial thermal transport, size-dependent phonon transport, and additional pathways assisted by surface phonon polaritons. We further discuss how temperature, structural defects, and interface characteristics modulate these transport processes. Finally, current controversies and limitations in research methodologies are addressed, and future research directions are proposed. This review provides a comprehensive understanding of thermal transport mechanisms in GaN-based materials at micro/nano-scale, offering physical insights for advanced heat dissipation strategies.
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