TeO₂-modified SiO₂-B₂O₃-Al₂O₃ glasses with enhanced dielectric constant and dissipation factor for advanced...

Recently, glass has emerged as a core substrate material for next-generation semiconductor packaging applications compared with organic substrates because of its low dielectric property, low coefficients of thermal expansion, and excellent scalability. In this study, we present new TeO₂-modified alkaline-earth alumino-borosilicate glasses with enhanced dielectric and thermomechanical properties for advanced packaging applications. The effect of TeO₂ content on structural, thermomechanical, and dielectric properties of the glasses was systematically investigated. FTIR and XPS studies revealed enhanced polymerization of the glass network with increasing TeO₂ addition up to 2.0 mol%, as evidenced by a reduction in the Q¹/Q⁴ ratio. By substituting TeO₂ for SiO₂ up to 2.0 mol%, the dielectric constant (Dk) decreased from 4.582 to 4.458 at 40 GHz, but increased to 4.537 for further increases in TeO₂ (3.0 mol%). The dissipation factor (Df) also decreased from 3.93 to 3.73(⋅10^-3) at 40 GHz upon TeO₂ substitution. Additionally, the incorporation of TeO₂ reduced the thermal expansion coefficient of the alumino-borosilicate glasses from 3.47 to 2.99(⋅10^- 6/K). These findings demonstrate that the TeO₂-modified alumino-borosilicate glasses are promising alternative core substrate materials for advanced semiconductor packaging, with the potential to mitigate the limitations of organic substrates at high frequencies in AI and high-performance computing applications.