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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Overcoming Boltzmann's Tyranny in All-Metal-Oxide Negative Capacitance Field-Effect Transistor.

Chan Lee1, Suhwan Hwang1,2, Jong Chan Shin1

  • 1Department of Chemical and Biological Engineering, and Institute of Chemical Processes, College of Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea.

ACS Nano
|May 19, 2026
PubMed
Summary

Negative capacitance field-effect transistors (NCFETs) using all-oxide, atomic layer deposition (ALD) fabrication overcome Boltzmann

Keywords:
Boltzmann’s tyrannyGa-doped hafniaatomic layer depositionnegative capacitance field-effect transistorultralow subthreshold swing

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Published on: May 13, 2020

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Negative capacitance field-effect transistors (NCFETs) offer a path beyond the 60 mV dec-1 subthreshold swing (SS) limit imposed by Boltzmann's tyranny.
  • Existing NCFETs often utilize non-CMOS-compatible materials (2D/1D) hindering large-scale fabrication and reproducibility.
  • Functional oxides present a promising alternative for CMOS-compatible NCFETs via methods like atomic layer deposition (ALD).

Purpose of the Study:

  • To demonstrate a novel NCFET architecture utilizing entirely ALD-fabricated components.
  • To achieve hysteresis-free, ultralow SS operation in NCFETs through precise control of ferroelectric and paraelectric layers.
  • To validate the NCFET's performance in a practical circuit application, such as a resistive load inverter.

Main Methods:

  • Fabrication of NCFETs using atomic layer deposition (ALD) for all constituent layers.
  • Utilized Ga-doped HfO2 (HGO) as the ferroelectric layer and undoped HfO2 as a paraelectric buffer.
  • Employed indium gallium zinc oxide (IGZO) as the semiconductor channel material.

Main Results:

  • Achieved an average room-temperature SS of 46 mV dec-1, surpassing the thermionic limit.
  • Demonstrated excellent device-to-device uniformity with all 27 tested devices exhibiting SS < 60 mV dec-1.
  • The NCFET driver transistor in a resistive load inverter showed a voltage gain of 25.7 and low power consumption (~18 pW μm-1).

Conclusions:

  • Established an all-oxide, ALD-compatible NCFET platform addressing scalability, uniformity, and reliability challenges.
  • The demonstrated NCFET technology is suitable for wafer-scale manufacturing and energy-efficient logic applications.
  • This work paves the way for next-generation electronics exceeding fundamental limitations with practical fabrication methods.