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Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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Native Oxide as a Tunnel Barrier for Two-Dimensional Floating Gate Synapses.

Weifan Zhou1,2, Yinxiao Li2, Fuqin Sun2

  • 1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.

ACS Applied Materials & Interfaces
|May 19, 2026
PubMed
Summary

Researchers developed novel floating-gate (FG) synaptic transistors using 2D materials. This breakthrough enables high-performance neuromorphic computing with improved memory and synaptic functions.

Keywords:
artificial synapsefloating gate memoryhafnium disulfidenative oxideneuromorphic computing

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Computer Engineering

Background:

  • Floating-gate (FG) synaptic transistors are key for neuromorphic computing.
  • High-quality ultrathin tunnel oxide layers are critical for 2D FG transistor performance and reliability.
  • Fabricating these layers has been a significant challenge.

Purpose of the Study:

  • To develop a method for creating high-quality ultrathin tunnel oxide layers for 2D FG transistors.
  • To investigate the performance and synaptic behavior of 2D FG transistors fabricated using the new method.
  • To assess the potential of these transistors for neuromorphic computing applications.

Main Methods:

  • Layer-by-layer oxidation of 2D HfS2 to create an ultrathin HfOx tunneling layer.
  • Fabrication of MoS2 transistors incorporating the HfOx/HfS2 heterostructure.
  • Characterization of transistor performance, including on/off current ratio, memory window, and data retention.
  • Evaluation of synaptic behavior and linearity over repeated cycles.
  • Simulation of CIFAR-10 dataset recognition accuracy.

Main Results:

  • A high-quality FG stack with an ultrathin HfOx tunneling layer and abrupt FG interface was successfully prepared.
  • The fabricated 2D FG transistors exhibited a high on/off current ratio (∼107), a large memory window (14.5 V), and long data retention (>104 s).
  • The transistors demonstrated linear synaptic potentiation and depression over 50 cycles.
  • A high recognition accuracy of ∼90.25% was achieved in CIFAR-10 simulations.

Conclusions:

  • Layer-by-layer oxidation of 2D HfS2 provides an effective route to high-quality ultrathin tunneling layers for 2D FG transistors.
  • The developed 2D FG transistors show excellent performance metrics and promising synaptic behavior for neuromorphic computing.
  • This approach facilitates the fabrication of highly integrated and reliable neuromorphic hardware.