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Related Experiment Video

Updated: May 22, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Starvation effect enables computing and memory functions in semiconductor-free fibres.

Xuhui Zhou¹, Lei Huang¹, Zhixun Wang²

¹School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.

Nature Communications

|May 20, 2026

Summary

Researchers developed semiconductor-free ionic fibres for wearable electronics. These cost-effective fibres enable low-power computing and data storage, overcoming limitations of traditional semiconductor-based devices.

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Fibre-based switchable devices are crucial for wearable electronics but are limited by semiconductor material requirements.
Specialized techniques for nanoscale patterning on curved fibres increase complexity and cost.

Purpose of the Study:

To present novel semiconductor-free four-terminal switchable ionic fibres (FSIFs).
To overcome scaling constraints and manufacturing challenges associated with semiconductor materials in fibre electronics.

Main Methods:

Development of FSIFs utilizing a nanoscale ion starvation mechanism.
Demonstration of compatibility with commercial textile manufacturing processes.

Main Results:

Achieved two switching capabilities: binary volatile (15:1 ON/OFF ratio at 1mV) and continuous non-volatile (2.6:1 ratio between 0.6-1.6V).
Maintained high device functionality with relaxed feature sizes (sub-millimetre).

Conclusions:

FSIFs offer a cost-effective, scalable solution for textile-integrated electronics.
Enabled applications in low-power computing, multi-level memory, and advanced functions like neural image recognition for next-generation wearable intelligence.