Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Research on the Migration and Placement Laws of Proppants in Fractures and Key Influencing Factors during Supercritical CO<sub>2</sub> Fracturing.

ACS omega·2026
Same author

Bacteria-mimetic bioadhesives with multivalent mucoadhesion and drug-compatible delivery.

Materials horizons·2026
Same author

Investigating association of triglycerides with hemodynamic parameters in patients with Low cardiovascular risk using 4D flow MRI.

Frontiers in cardiovascular medicine·2026
Same author

Cantharidin-manganese based cocktail nanoplatform Co-activating ferroptosis and STING for enhanced HCC immunotherapy.

Materials today. Bio·2026
Same author

Boosting Photocatalytic Overall Water Splitting Activity of Phosphorene Through Five-Coordinate Passivation Enabled by Carbene Addition.

Angewandte Chemie (International ed. in English)·2026
Same author

Rhodium Single-Atom Decorated CeO<sub>2</sub>:Yb,Er/Rh-ZnIn<sub>2</sub>S<sub>4</sub> With Enhanced Photo-Thermo-Electric Effects for Efficient H<sub>2</sub> Evolution and Biomass Valorization.

Small (Weinheim an der Bergstrasse, Germany)·2026

Related Experiment Video

Updated: May 26, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

Bonding-Enabled Interfacial Reconstruction at Buried Interface for High-Efficiency Sb2Se3 Solar Cells.

Shuwei Sheng1, Junjie Yang1, Jianyu Li1

  • 1Hefei National Research Center for Physical Sciences At the Microscale, School of Chemistry and Materials Science, Key Laboratory of Energy Conversion Materials, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui, China.

Small (Weinheim an Der Bergstrasse, Germany)
|May 24, 2026
PubMed
Summary

Researchers improved antimony selenide solar cells by acid-treating the cadmium sulfide layer. This enhanced interface quality, promoting better antimony selenide growth and reducing defects, leading to a 9.74% power conversion efficiency.

Keywords:
Sb2Se3electron transport layerinterfacial engineeringsolar cellssulfatesurface treatment

More Related Videos

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
09:51

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Published on: April 22, 2013

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence
12:21

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

Related Experiment Videos

Last Updated: May 26, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
09:51

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Published on: April 22, 2013

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence
12:21

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

Area of Science:

  • Materials Science
  • Photovoltaics
  • Semiconductor Physics

Background:

  • Antimony selenide (Sb2Se3) is a promising photovoltaic material due to its excellent optoelectronic properties and stability.
  • Sb2Se3 solar cells face challenges with poor interfacial contact and recombination losses, hindering efficiency.

Purpose of the Study:

  • To develop an acid-activated interfacial reconstruction strategy for improving the CdS/Sb2Se3 interface in solar cells.
  • To enhance the quality of the buried interface and mitigate recombination losses.

Main Methods:

  • HCl post-treatment was applied to the cadmium sulfide (CdS) film.
  • Surface characteristics of CdS were analyzed to understand interfacial changes.
  • Antimony selenide (Sb2Se3) was deposited via thermal evaporation (TE).

Main Results:

  • HCl treatment improved CdS surface uniformity and reduced sulfate species.
  • Enhanced Sb-S bonding at the interface promoted oriented Sb2Se3 growth.
  • Achieved preferred [hk1] orientation in Sb2Se3 and reduced selenium vacancies.
  • Suppressed non-radiative recombination and improved carrier transport.

Conclusions:

  • Acid-activated interfacial reconstruction is an effective strategy for optimizing Sb2Se3 solar cells.
  • The method leads to improved interfacial properties and enhanced device performance.
  • A champion power conversion efficiency (PCE) of 9.74% was achieved.