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Published on: May 28, 2016
Radiative Electronic Bound States in the Continuum from Defects in Semiconductors
Seong Yun Hong1, Liang Z Tan2, Ki Hoon Lee3
1Department of Intelligent Semiconductor Engineering, Incheon National University, Incheon 22012, Republic of Korea.
Defect states in semiconductors can be optically active, hosting radiative electronic bound states in the continuum (BICs). This finding enables new defect-based optical systems, including quantum emitters and qubits.
Area of Science:
- Solid-state physics
- Quantum optics
- Materials science
Background:
- Continuum-buried defect states in semiconductors are typically optically inactive due to strong coupling to continuum bands.
- Understanding defect states is crucial for developing advanced semiconductor devices.
Purpose of the Study:
- To demonstrate that continuum-buried defect states can host radiative electronic bound states in the continuum (BICs).
- To investigate the silicon G center as a model system for this phenomenon.
- To establish BICs as a paradigm for defect-based optical systems.
Main Methods:
- Hybrid functional first-principles calculations with Hubbard U correction.
- Analysis of defect state energy-level reordering under optical excitation.
- Computation of temperature-dependent nonradiative lifetimes and comparison with experimental photoluminescence (PL) lifetimes.
Main Results:
- A localized defect state, initially below the valence band maximum (VBM), shifts above VBM upon optical excitation due to exchange-driven energy-level reordering.
- This transition suppresses nonradiative decay, enabling robust radiative emission.
- Calculated nonradiative lifetimes quantitatively reproduce experimental PL lifetimes across temperatures.
Conclusions:
- Continuum-embedded defect states can be stabilized and become optically active.
- Electronic BICs offer a general mechanism for designing efficient defect-based optical systems.
- This research opens avenues for novel quantum emitters and qubits.
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