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Defects That Magnetize Beyond Monolayer Ptse2.

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Defects That Magnetize Beyond Monolayer Ptse2.

Related Experiment Video

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks

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Published on: June 9, 2023

Defects That Magnetize Beyond Monolayer PtSe₂.

Ilias M Oikonomou^1,2,3, Danielle Douglas-Henry^2,3, Mohammadreza Daqiqshirazi^1,4

¹Faculty of Chemistry and Food Chemistry, Dresden University of Technology, Dresden, Germany.

Small (Weinheim an Der Bergstrasse, Germany)

|May 25, 2026

View abstract on PubMed

Summary

This summary is machine-generated.

Defect engineering in multilayer platinum diselenide (PtSe2) creates robust magnetism. Complex defects restore magnetism, enabling tunable 2D half-metallic states for spintronics.

Keywords:

PtSe2 aberration‐corrected STEM defects density functional theory magnetism multilayer two‐dimensional

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) materials offer potential for advanced spintronic and quantum devices.
Achieving magnetism beyond the monolayer in 2D materials is a significant challenge.

Purpose of the Study:

Investigate the emergence and control of magnetism in multilayer platinum diselenide (PtSe2).
Explore defect engineering strategies to realize tunable magnetic properties in PtSe2.

Main Methods:

Hybrid density functional theory (DFT) calculations.
Aberration-corrected scanning transmission electron microscopy (AC-STEM).

Main Results:

Magnetism in PtSe2 is typically quenched by interlayer interactions but restored by complex defects (Pt vacancy + PtSe antisite).

These defects induce magnetic moments up to 3.16 µB and create 2D half-metallic states in bilayer PtSe2.

Se vacancies tune magnetic properties and extend magnetic moments in trilayer PtSe2.

Conclusions:

Defect engineering provides a method for robust magnetic phase control in PtSe2 without external doping or strain.
PtSe2 serves as a tunable platform for room-temperature spintronic and valleytronic applications.