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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
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Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Related Experiment Video

Updated: May 26, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced

Siyu Liu1, Yihao Zhuang1,2, Pengju Cui2

  • 1Energy Research Institute @ NTU, Nanyang Technological University, 1 CleanTech Loop, #06-04, Singapore 637141, Republic of Singapore.

ACS Applied Materials & Interfaces
|May 25, 2026
PubMed
Summary

Gallium nitride (GaN) transistors achieve multimode operation by tuning their threshold voltage (VTH) using stress-strain-polarization coupling. This breakthrough enables versatile functionalities for advanced electronic applications.

Keywords:
AlN/GaN MIS-HEMTsPECVD−SiN passivationenhancement-mode operationmultimode GaN transistorsstress−strain−polarization couplingthreshold voltage modulationultrathin AlN barrier

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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Last Updated: May 26, 2026

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Published on: April 12, 2018

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09:49

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Device Engineering

Background:

  • Gallium nitride (GaN) transistors are crucial for high-frequency and high-power applications.
  • Achieving both depletion-mode (D-mode) and enhancement-mode (E-mode) operation in a single GaN transistor, known as multimodality, presents a significant challenge.
  • Existing methods for threshold voltage (VTH) tuning often involve complex fabrication steps or compromise device performance.

Purpose of the Study:

  • To demonstrate a novel method for achieving ultrawide and tunable threshold voltage (VTH) in GaN transistors.
  • To enable multimode operation (D-mode and E-mode) within a single GaN device.
  • To explore the underlying physics of stress-strain-polarization coupling (SSPC) for device performance enhancement.

Main Methods:

  • Epitaxial growth of ultrathin aluminum nitride (AlN) barriers with high interface quality.
  • Introduction of tensile stress via plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) passivation.
  • Utilizing stress-strain-polarization coupling (SSPC) to modify the two-dimensional electron gas (2DEG) density.
  • Device simulations to analyze conduction mode evolution with varying passivation thickness (PT).

Main Results:

  • Achieved a broadly tunable and ultrawide threshold voltage (VTH) window covering both D-mode and E-mode operation.
  • Generated significant strain (up to -4.2%) along [0001] through SSPC, increasing 2DEG density by over an order of magnitude.
  • Simulations clarified the transition between background-carrier, MOS-like, and D/E-mode high-electron mobility transistor (HEMT) conduction modes.
  • Demonstrated SSPC as an etch-free, low-damage method for tuning polarization, carrier density, and VTH.

Conclusions:

  • Multimode GaN transistors with continuously tunable conduction modes are realized through SSPC.
  • This approach offers a compact and effective way to achieve VTH tunability and enhance 2DEG density.
  • The developed GaN transistors possess multiple functionalities for diverse applications, including RF amplification, neuromorphic computing, and power conversion.