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Electrochemical Wiring of a Metal Nanofilament to Form a Molecular Junction
Sekito Nishimuro1, Tohru Tsuruoka2, Tatsuhiko Ohto3
1Department of Materials Science and Engineering, School of Materials and Chemical Technology, Institute of Science Tokyo, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8550, Japan.
Abstract:
Leveraging the functionalities of molecules in electronic devices seems promising for the development of next-generation technologies. However, wiring an electrode to a molecular layer is challenging. Here, we introduce a method for connecting a microscale metal electrode to a molecular layer using an atomic switch that controls the formation and rupture of a metal nanofilament using a bias voltage. Specifically, a 1,4-benzenedithiol (BDT) molecular layer is embedded within an atomic switch. A bias sweep applied to the Ag top electrode induces a transition between a high-conductive state (2 mG0, where G0 = 2e2/h) and a low-conductive state (35 μG0), with both states exhibiting nonvolatile operation. Current-voltage analysis and density functional theory simulation reveal that a Ag/BDT/Ag junction with approximately 20 molecules forms in the high-conductive state. Thus, our method is effective for the wiring of a microscale electrode to a nanoscale molecular layer.
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