High-Performance Infrared Photodetectors Based on Graphene Nanoribbon Vertical Heterojunctions via Dissociated...

Graphene nanoribbons (GNRs) inherit the exceptional carrier mobility of graphene while offering tunable bandgaps, making them promising for high-performance optoelectronics. Here, we report a high-performance near-infrared photodetector based on a p-GNR/Al₂O₃/n-Si vertical heterojunction, where GNR is directly produced by dissociating double-walled carbon nanotubes (DWCNTs). The 10 nm Al₂O₃ interlayer serves as an effective barrier and passivation layer, suppressing dark current and enhancing interfacial charge separation. Under 1064 nm illumination, the device delivers outstanding performance. At -6 V bias, the responsivity and detectivity reach 159.55 A/W and 2.01 × 10¹² Jones, respectively. Notably, under zero-bias self-powered mode, it still achieves a high responsivity of 8.71 A/W, a detectivity of 1.15 × 10¹³ Jones, and a fast response time of 307.5 μs. These results fully validate the feasibility of GNR-based heterojunctions for high-performance optoelectronic devices and pave the way for their future integration into low-power, high-sensitivity photodetection systems and next-generation optoelectronic integrated circuits.