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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Updated: May 28, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Selective Defect Engineering for Gate-Controlled yet Contact-Transparent Bi2O2Se Transistors.

Huynh-Uyen-Phuong Nguyen1, Tai-Ting Lee2,3, Yu-Wei Chang2

  • 1College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan.

ACS Nano
|May 26, 2026
PubMed
Summary
This summary is machine-generated.

Engineers developed a defect-engineering strategy for two-dimensional semiconductors. This method improves gate control and contact resistance in bismuth oxyselenide transistors, enabling high-performance electronics.

Keywords:
Bi2O2Se transistorscontact-transparentgate-contact trade-offnitrogen-incorporationself-doping suppression

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) semiconductors are crucial for ultrascaled electronics.
  • A key challenge is balancing strong gate control with low-resistance contacts.
  • Bismuth oxyselenide (Bi2O2Se) is a promising 2D material with intrinsic self-doping issues.

Purpose of the Study:

  • To address the gate-contact trade-off in Bi2O2Se transistors.
  • To develop a selective defect-engineering strategy for improved device performance.
  • To enable precise carrier-density modulation and enhance device functionality.

Main Methods:

  • Low-temperature nitrogen incorporation to passivate selenium vacancies.
  • Density Functional Theory (DFT) calculations.
  • Scanning Tunneling Spectroscopy (STS).
  • Fabrication and characterization of Bi2O2Se field-effect transistors.

Main Results:

  • Nitrogen incorporation passivates selenium vacancies via N-Bi bonding, suppressing self-doping.
  • Nitrogen acts as an acceptor-like dopant, neutralizing vacancy-induced donor states.
  • Fermi level shifts toward midgap, allowing precise carrier modulation and band-like transport.
  • Spatially confined nitrogen incorporation converts transistors to enhancement mode.
  • Achieved high electron mobility and on/off ratios up to 10^9 with ohmic contacts.

Conclusions:

  • Selective defect engineering decouples channel electrostatics from contact properties.
  • This approach offers a scalable and thermally stable route for 2D transistors.
  • Enables gate-controllable, contact-transparent 2D transistors for integrated logic circuits.