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Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
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An Embedded Trace Redistribution Layer with Rounded-Bottom Cu Geometry and Ti Capping for Enhanced Electromigration

Wonchul Do1,2, Jeongmin Ju1, Minjin Kim1

  • 1Global R&D Center, Amkor Technology Korea, Inc., Incheon 21991, Republic of Korea.

Micromachines
|May 27, 2026
PubMed
Summary
This summary is machine-generated.

This study enhances electromigration (EM) reliability using a novel embedded trace redistribution layer (ETR) with rounded copper traces and titanium capping. The ETR significantly outperforms conventional methods, showing minimal resistance increase over 4000 hours.

Keywords:
electromigrationembedded traceredistribution layer (RDL)reliabilitytitanium barrier

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Device Physics

Background:

  • Electromigration (EM) is a critical reliability challenge in advanced semiconductor interconnects.
  • Current reliability enhancement strategies often involve complex process modifications or material additions.

Purpose of the Study:

  • To evaluate the electromigration (EM) performance of a novel embedded trace redistribution layer (ETR) design.
  • To compare the EM reliability of the ETR with a conventional semi-additive-process (SAP) redistribution layer (RDL).
  • To elucidate the mechanisms behind the improved EM performance of the ETR.

Main Methods:

  • Comparative analysis of ETR (with and without Ti capping) and SAP RDL under EM stress conditions.
  • Transmission electron microscopy (TEM) with atomic-percentage mapping to assess barrier effectiveness.
  • Electro-thermal and stress simulations to identify failure mechanisms and stress concentrations.

Main Results:

  • The ETR demonstrated a marked improvement in EM lifetime compared to the SAP RDL.
  • The Ti-capped ETR showed minimal resistance increase (<10%) after 4000 hours of testing.
  • TEM confirmed Ti capping effectively prevented copper diffusion.

Conclusions:

  • The novel ETR design, featuring rounded-bottom copper traces and Ti capping, significantly enhances EM reliability.
  • The rounded-bottom geometry mitigates stress concentration, while Ti capping acts as an effective diffusion barrier.
  • These findings offer a promising approach for improving the long-term stability of semiconductor interconnects.